View K4R441869B-NMCK7_442741.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

K4R271669B/K4R441869B
Direct RDRAMTM
128/144Mbit RDRAM(B-die)
256K x 16/18 bit x 32s banks Direct RDRAMTM
Version 1.11 October 2000
Page -1
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Change History
Version 1.11 ( October 2000) - Preliminary
* Based on the Rambus 1.11ver. 128/144Mbit(32s banks) RDRAM Datasheet.
Direct RDRAMTM
Page 0
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Overview
The Rambus Direct RDRAMTM is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 128/144-Mbit Direct Rambus DRAMs (RDRAM(R)) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz to 800MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per sixteen bytes). The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions. System oriented features for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction.
Direct RDRAMTM
SAMSUNG
050
K4Rxxxx69B-Nxxx
SAMSUNG 050 K4Rxxxx69B-Mxxx
M
a. Normal Package b. Mirrored Package
Figure 1: Direct RDRAM CSP Package The 128/144-Mbit Direct RDRAMs are offered in a CSP horizontal package suitable for desktop as well as lowprofile add-in card and mobile applications.
Key Timing Parameters/Part Numbers
Speed Organization
Bin 256Kx16x32s a -CK8 -CK7 -CG6 256Kx18x32s a -CK8 -CK7 -CG6 I/O Freq. MHz 800 711 600 800 711 600 tRAC (Row Access Time) ns 45 45 53.3 45 45 53.3
Part Number
Features
Highest sustained bandwidth per DRAM device
K4R271669B-Nb(M)CcK8 K4R271669B-N(M)CK7 K4R271669B-N(M)CG6 K4R441869B-N(M)CK8 K4R441869B-N(M)CK7 K4R441869B-N(M)CG6
- 1.6GB/s sustained data transfer rate - Separate control and data buses for maximized efficiency - Separate row and column control buses for easy scheduling and highest performance - 32 banks: four transactions can take place simultaneously at full bandwidth data rates
Low latency features
a."32s" - 32 banks which use a "split" bank architecture. b."N" - normal package, "M" - mirrored package. c."C" - RDRAM core uses normal power self refresh.
- Write buffer to reduce read latency - 3 precharge mechanisms for controller flexibility - Interleaved transactions
Advanced power management:
- Direct RDRAM operates from a 2.5 volt supply - Multiple low power states allows flexibility in power consumption versus time to transition to active state - Power-down self-refresh
Organization: 1Kbyte pages and 32 banks, x 16/18
- x18 organization allows ECC configurations or increased storage/bandwidth - x16 organization for low cost applications
Uses Rambus Signaling Level (RSL) for up to 800MHz
operation
Page 1
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Pinouts and Definitions
Center-Bonded Devices
These tables shows the pin assignments of the center-bonded RDRAM package. The top table is for the normal package,
Direct RDRAMTM
and bottom table is for the mirrored package. The mechanical dimensions of this package are shown in a later section. Refer to Section "Center-Bonded uBGA Package" on page 18.
b. Top marking example of normal package
Table 1-1: a. Center-Bonded Device (top view for normal package)
12 11 10 9 8 7 6 5 4 3 2 1
ROW COL
GND VDD VDD GND SCK VCMOS DQA8* DQA6 GND DQA3 DQA1 VDD DQA0 VREF GND CTMN RQ7 GND CTM RQ1 VDD RQ4 DQB2 GND RQ0 DQB6 GND DQB3 SIO0 VCMOS DQB8* DQA7 GND CMD DQA4 VDD DQA5 CFM GND DQA2 CFMN GNDa VDDa RQ5 VDD RQ6 RQ3 GND RQ2 DQB0 VDD DQB1 DQB4 VDD DQB5 DQB7 GND SIO1 GND VDD VDD GND
SAMSUNG 050 K4Rxxxx69B-Nxxx
For normal package, pin #1(ROW 1, COL A) is located at the A1 position on the top side and the A1 position is marked by the marker " ".
*
Top View
A
B
C
D
E
F
G
H
J
Chip
Table 1-2: a. Center-Bonded Device (top view for mirrored package)
12 11 10 9 8 7 6 5 4 3 2 1
ROW COL
GND VDD VDD GND CMD GND DQA7 DQA5 VDD DQA4 DQA2 GND CFM VDDa GNDa CFMN RQ6 VDD RQ5 RQ2 GND RQ3 DQB1 VDD DQB0 DQB5 VDD DQB4 SIO1 GND DQB7 DQA8* VCMOS SCK DQA3 GND DQA6 DQA0 VDD DQA1 CTMN GND VREF CTM GND RQ7 RQ4 VDD RQ1 RQ0 GND DQB2 DQB3 GND DQB6 DQB8* VCMOS SIO0 GND VDD VDD GND
* DQA8/DQB8 are just used for 144Mb RDRAM. These two pins are NC(No Connection) in 128Mb RDRAM.
b. Top marking example of mirrored package
SAMSUNG 050 K4Rxxxx69B-Mxxx
M
A
B
C
D
E
F
G
H
J
For mirrored package, pin #1(ROW 1, COL A) is located at the A1 postion on the top side and the A1 position is marked by the alphabet "M".
Page 2
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Table 2: Pin Description
Signal SIO1,SIO0 I/O I/O Type CMOSa CMOSa # of Pins 2 Description
Direct RDRAMTM
Serial input/output. Pins for reading from and writing to the control registers using a serial access protocol. Also used for power management. Command input. Pins used in conjunction with SIO0 and SIO1 for reading from and writing to the control registers. Also used for power management. Serial clock input. Clock source used for reading from and writing to the control registers Supply voltage for the RDRAM core and interface logic. Supply voltage for the RDRAM analog circuitry. Supply voltage for CMOS input/output pins. Ground reference for RDRAM core and interface. Ground reference for RDRAM analog circuitry. Data byte A. Nine pins which carry a byte of read or write data between the Channel and the RDRAM. DQA8 is not used (no connection) by RDRAMs with a x16 organization. Clock from master. Interface clock used for receiving RSL signals from the Channel. Positive polarity. Clock from master. Interface clock used for receiving RSL signals from the Channel. Negative polarity Logic threshold reference voltage for RSL signals Clock to master. Interface clock used for transmitting RSL signals to the Channel. Negative polarity. Clock to master. Interface clock used for transmitting RSL signals to the Channel. Positive polarity. Row access control. Three pins containing control and address information for row accesses. Column access control. Five pins containing control and address information for column accesses. Data byte B. Nine pins which carry a byte of read or write data between the Channel and the RDRAM. DQB8 is not used (no connection) by RDRAMs with a x16 organization.
CMD
I
1
SCK
I
CMOSa
1
VDD VDDa VCMOS GND GNDa DQA8..DQA0 I/O RSLb
10 1 2 13 1 9
CFM
I
RSLb RSLb
1
CFMN
I
1
VREF CTMN I RSL
b
1 1
CTM
I
RSLb RSLb RSLb RSLb
1
RQ7..RQ5 or ROW2..ROW0 RQ4..RQ0 or COL4..COL0 DQB8.. DQB0
I
3
I
5
I/O
9
Total pin count per package
62
a. All CMOS signals are high-true; a high voltage is a logic one and a low voltage is logic zero. b. All RSL signals are low-true; a low voltage is a logic one and a high voltage is logic zero.
Page 3
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
DQB8..DQB0 9 RQ7..RQ5 or ROW2..ROW0 3 CTM CTMN SCK,CMD SIO0,SIO1 CFM CFMN 2 2 RCLK 1:8 Demux TCLK Packet Decode ROWR ROWA 11 5 5 9 ROP DR BR AV
Match
Direct RDRAMTM
RQ4..RQ0 or COL4..COL0 5 DQA8..DQA0 9 RCLK 1:8 Demux RCLK Control Registers 6 REFR
Power Modes
COLX 5 5
Packet Decode COLC 5 5 5 6 C
8
COLM 8
R
DEVID
XOP DX BX COP DC BC M S
Match XOP Decode Match
MB MA
Mux Row Decode
DM
Write Buffer Mux Mux
PRER ACT Sense Amp 32x72 Internal DQB Data Path
SAmp SAmp SAmp 1/2 0/1 0
PREX
Column Decode & Mask
DRAM Core 32x72 512x64x144 Bank 0 Bank 1 Bank 2 *** 32x72 72
SAmp SAmp SAmp 0 0/1 1/2
PREC
RD, WR
72
Internal DQA Data Path
72
72
RCLK
9
9
***
9
***
9
RCLK
SAmp SAmp SAmp 15 14/15 13/14
Bank 13 Bank 14 Bank 15
SAmp SAmp SAmp 13/14 14/15 15
Write Buffer
Write Buffer
1:8 Demux
9
1:8 Demux
9
SAmp SAmp SAmp 17/18 16/17 16
SAmp SAmp SAmp 16 16/17 17/18
Bank 16 Bank 17 Bank 18 ***
TCLK
9
9
TCLK
***
***
8:1 Mux
9
8:1 Mux
9
SAmp SAmp SAmp 31 30/31 29/30
Bank 29 Bank 30 Bank 31
Figure 2: 128/144 Mbit(256K x16/18 x32s) Direct RDRAM Block Diagram
SAmp SAmp SAmp 29/30 30/31 31
Page 4
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
General Description
Figure 2 is a block diagram of the 128/144Mbit Direct RDRAM. It consists of two major blocks: a "core" block built from banks and sense amps similar to those found in other types of DRAM, and a Direct Rambus interface block which permits an external controller to access this core at up to 1.6GB/s.
Direct RDRAMTM
24-bit ROWA (row-activate) or ROWR (row-operation) packet.
COL Pins: The principle use of these five pins is to
manage the transfer of data between the DQA/DQB pins and the sense amps of the RDRAM. These pins are de-multiplexed into a 23-bit COLC (column-operation) packet and either a 17-bit COLM (mask) packet or a 17-bit COLX (extended-operation) packet.
Control Registers: The CMD, SCK, SIO0, and SIO1
pins appear in the upper center of Figure 2. They are used to write and read a block of control registers. These registers supply the RDRAM configuration information to a controller and they select the operating modes of the device. The nine bit REFR value is used for tracking the last refreshed row. Most importantly, the five bit DEVID specifies the device address of the RDRAM on the Channel.
ACT Command: An ACT (activate) command from an
ROWA packet causes one of the 512 rows of the selected bank to be loaded to its associated sense amps (two 256 byte sense amps for DQA and two for DQB).
PRER Command: A PRER (precharge) command from
an ROWR packet causes the selected bank to release its two associated sense amps, permitting a different row in that bank to be activated, or permitting adjacent banks to be activated.
Clocking: The CTM and CTMN pins (Clock-To-Master)
generate TCLK (Transmit Clock), the internal clock used to transmit read data. The CFM and CFMN pins (Clock-FromMaster) generate RCLK (Receive Clock), the internal clock signal used to receive write data and to receive the ROW and COL pins.
RD Command: The RD (read) command causes one of
the 64 dualocts of one of the sense amps to be transmitted on the DQA/DQB pins of the Channel.
WR Command: The WR (write) command causes a
dualoct received from the DQA/DQB data pins of the Channel to be loaded into the write buffer. There is also space in the write buffer for the BC bank address and C column address information. The data in the write buffer is automatically retired (written with optional bytemask) to one of the 64 dualocts of one of the sense amps during a subsequent COP command. A retire can take place during a RD, WR, or NOCOP to another device, or during a WR or NOCOP to the same device. The write buffer will not retire during a RD to the same device. The write buffer reduces the delay needed for the internal DQA/DQB data path turnaround.
DQA,DQB Pins: These 18 pins carry read (Q) and write
(D) data across the Channel. They are multiplexed/de-multiplexed from/to two 72-bit data paths (running at one-eighth the data frequency) inside the RDRAM.
Banks: The 16Mbyte core of the RDRAM is divided into thirty two 0.5Mbyte banks, each organized as 512 rows, with each row containing 64 dualocts, and each dualoct containing 16 bytes. A dualoct is the smallest unit of data that can be addressed. Sense Amps: The RDRAM contains 34 sense amps. Each
sense amp consists of 512 bytes of fast storage (256 for DQA and 256 for DQB) and can hold one-half of one row of one bank of the RDRAM. The sense amp may hold any of the 512 half-rows of an associated bank. However, each sense amp is shared between two adjacent banks of the RDRAM (except for sense amps 0, 15, 16, and 31). This introduces the restriction that adjacent banks may not be simultaneously accessed.
PREC Precharge: The PREC, RDA and WRA
commands are similar to NOCOP, RD and WR, except that a precharge operation is performed at the end of the column operation. These commands provide a second mechanism for performing precharge.
PREX Precharge: After a RD command, or after a WR
command with no byte masking (M=0), a COLX packet may be used to specify an extended operation (XOP). The most important XOP command is PREX. This command provides a third mechanism for performing precharge.
RQ Pins: These pins carry control and address information. They are broken into two groups. RQ7..RQ5 are also called ROW2..ROW0, and are used primarily for controlling row accesses. RQ4..RQ0 are also called COL4..COL0, and are used primarily for controlling column accesses.
ROW Pins: The principle use of these three pins is to
manage the transfer of data between the banks and the sense amps of the RDRAM. These pins are de-multiplexed into a
Page 5
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Packet Format
Figure 3 shows the formats of the ROWA and ROWR packets on the ROW pins. Table 3 describes the fields which comprise these packets. DR4T and DR4F bits are encoded to contain both the DR4 device address bit and a framing bit which allows the ROWA or ROWR packet to be recognized by the RDRAM.
Direct RDRAMTM
The AV (ROWA/ROWR packet selection) bit distinguishes between the two packet types. Both the ROWA and ROWR packet provide a five bit device address and a five bit bank address. An ROWA packet uses the remaining bits to specify a nine bit row address, and the ROWR packet uses the remaining bits for an eleven bit opcode field. Note the use of the "RsvX" notation to reserve bits for future address field extension.
Table 3: Field Description for ROWA Packet and ROWR Packet
Field DR4T,DR4F DR3..DR0 BR4..BR0 AV R8..R0 ROP10..ROP0 Description Bits for framing (recognizing) a ROWA or ROWR packet. Also encodes highest device address bit. Device address for ROWA or ROWR packet. Bank address for ROWA or ROWR packet. RsvB denotes bits ignored by the RDRAM. Selects between ROWA packet (AV=1) and ROWR packet (AV=0). Row address for ROWA packet. RsvR denotes bits ignored by the RDRAM. Opcode field for ROWR packet. Specifies precharge, refresh, and power management functions.
Figure 3 also shows the formats of the COLC, COLM, and COLX packets on the COL pins. Table 4 describes the fields which comprise these packets. The COLC packet uses the S (Start) bit for framing. A COLM or COLX packet is aligned with this COLC packet, and is also framed by the S bit. The 23 bit COLC packet has a five bit device address, a five bit bank address, a six bit column address, and a four bit opcode. The COLC packet specifies a read or write command, as well as some power management commands.
The remaining 17 bits are interpreted as a COLM (M=1) or COLX (M=0) packet. A COLM packet is used for a COLC write command which needs bytemask control. The COLM packet is associated with the COLC packet from at least t RTR earlier. An COLX packet may be used to specify an independent precharge command. It contains a five bit device address, a five bit bank address, and a five bit opcode. The COLX packet may also be used to specify some housekeeping and power management commands. The COLX packet is framed within a COLC packet but is not otherwise associated with any other packet.
Table 4: Field Description for COLC Packet, COLM Packet, and COLX Packet
Field S DC4..DC0 BC4..BC0 C5..C0 COP3..COP0 M MA7..MA0 MB7..MB0 DX4..DX0 BX4..BX0 XOP4..XOP0 Description Bit for framing (recognizing) a COLC packet, and indirectly for framing COLM and COLX packets. Device address for COLC packet. Bank address for COLC packet. RsvB denotes bits reserved for future extension (controller drives 0's). Column address for COLC packet. RsvC denotes bits ignored by the RDRAM. Opcode field for COLC packet. Specifies read, write, precharge, and power management functions. Selects between COLM packet (M=1) and COLX packet (M=0). Bytemask write control bits. 1=write, 0=no-write. MA0 controls the earliest byte on DQA8..0. Bytemask write control bits. 1=write, 0=no-write. MB0 controls the earliest byte on DQB8..0. Device address for COLX packet. Bank address for COLX packet. RsvB denotes bits reserved for future extension (controller drives 0's). Opcode field for COLX packet. Specifies precharge, IOL control, and power management functions.
Page 6
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Direct RDRAMTM
T0
T1
T2
T3
T8
T9
T10
T11
CTM/CFM
CTM/CFM
ROW2 DR4T DR2 BR0 BR3 RsvR R8 ROW1 ROW0
DR4F DR1 BR1 BR4 RsvR R7
R5
R2
ROW2 DR4T DR2 BR0 BR3 ROW1 ROW0
ROP10 ROP8 ROP5 ROP2
R4 R3
R1 R0
DR4F DR1 BR1 BR4 ROP9 ROP7 ROP4 ROP1 DR3 DR0 BR2 RsvB AV=0 ROP6 ROP3 ROP0
DR3 DR0 BR2 RsvB AV=1 R6
ROWA Packet
T0 T1 T2 T3
ROWR Packet
T 0 T 1 T 2 T 3 T 4 T 5 T 6 T 7 T 8 T 9 T 10 T 11 T12 T13 T14 T15
CTM/CFM
DC4 DC3 DC2 COP1 DC1 COP0 DC0 COP2 S=1 RsvC C5 RsvB BC2 BC4 BC1 COP3 BC3 BC0 C4 C3 C2 C1 C0
CTM/CFM ROW2 ..ROW0 COL4 ..COL0 DQA8..0 DQB8..0
ACT a0 PRER c0
COL4 COL3 COL2 COL1 COL0
tPACKET
WR b1 MSK (b1) PREX d0
COLC Packet
T8 T9 T10 T11 T12 T13 T14 T15
CTM/CFM
CTM/CFM
COL4 COL3 COL2 COL1 COL0
a
S=1a MA7 MA5 MA3 MA1 M=1 MA6 MA4 MA2 MA0 MB7 MB4 MB1 MB6 MB3 MB0 MB5 MB2
COL4 COL3 COL2 COL1 COL0
S=1b DX4 XOP4 RsvB BX1 M=0 DX3 XOP3 BX4 BX0 DX2 XOP2 BX3 DX1 XOP1 BX2 DX0 XOP0
b The
The COLM is associated with a previous COLC, and is aligned with the present COLC, indicated by the Start bit (S=1) position.
COLM Packet Figure 3: Packet Formats
COLX Packet
COLX is aligned with the present COLC, indicated by the Start bit (S=1) position.
Page 7
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Field Encoding Summary
Table 5 shows how the six device address bits are decoded for the ROWA and ROWR packets. The DR4T and DR4F encoding merges a fifth device bit with a framing bit. When neither bit is asserted, the device is not selected. Note that a
Direct RDRAMTM
broadcast operation is indicated when both bits are set. Broadcast operation would typically be used for refresh and power management commands. If the device is selected, the DM (DeviceMatch) signal is asserted and an ACT or ROP command is performed.
Table 5: Device Field Encodings for ROWA Packet and ROWR Packet
DR4T 1 0 1 0 DR4F 1 1 0 0 Device Selection All devices (broadcast) One device selected One device selected No packet present Device Match signal (DM) DM is set to 1 DM is set to 1 if {DEVID4..DEVID0} == {0,DR3..DR0} else DM is set to 0 DM is set to 1 if {DEVID4..DEVID0} == {1,DR3..DR0} else DM is set to 0 DM is set to 0
Table 6 shows the encodings of the remaining fields of the ROWA and ROWR packets. An ROWA packet is specified by asserting the AV bit. This causes the specified row of the specified bank of this device to be loaded into the associated sense amps. An ROWR packet is specified when AV is not asserted. An 11 bit opcode field encodes a command for one of the banks of this device. The PRER command causes a bank and its two associated sense amps to precharge, so another row or an adjacent bank may be activated. The REFA (refresh-activate) command is similar to the ACT command, except the
row address comes from an internal register REFR, and REFR is incremented at the largest bank address. The REFP (refresh-precharge) command is identical to a PRER command. The NAPR, NAPRC, PDNR, ATTN, and RLXR commands are used for managing the power dissipation of the RDRAM and are described in more detail in "Power State Management" on page 50. The TCEN and TCAL commands are used to adjust the output driver slew rate and they are described in more detail in "Current and Temperature Control" on page 56.
Table 6: ROWA Packet and ROWR Packet Field Encodings
ROP10..ROP0 Field DMa 0 1 1 1 1 1 1 1 1 1 1 1 1 AV 10 1 0 0 0 0 0 0 0 0 0 0 0 9 8 7 6 5 4 3 2:0 --ACT 0 1 0 0 0 0 x x 0 0 0 0 1 1 0 0 0 x x 0 0 0 xc 0 0 0 1 1 x x 0 0 0 x 0 0 1 0 1 x x 0 0 0 x x x x x x 0 1 x x 0 000 000 000 000 000 000 000 000 001 010 000 PRER REFA REFP PDNR NAPR NAPRC ATTNb RLXR TCAL TCEN NOROP No operation. Activate row R8..R0 of bank BR4..BR0 of device and move device to ATTNb. Precharge bank BR4..BR0 of this device. Refresh (activate) row REFR8..REFR0 of bank BR4..BR0 of device. Increment REFR if BR4..BR0 = 11111 (see Figure 51). Precharge bank BR4..BR0 of this device after REFA (see Figure 51). Move this device into the powerdown (PDN) power state (see Figure 48). Move this device into the nap (NAP) power state (see Figure 48). Move this device into the nap (NAP) power state conditionally Move this device into the attention (ATTN) power state (see Figure 46). Move this device into the standby (STBY) power state (see Figure 47). Temperature calibrate this device (see Figure 54). Temperature calibrate/enable this device (see Figure 54). No operation. Name Command Description
Row address 1 0 1 x x x x x 0 0 0 1 0 0 x x x x x 0 0 0 0 0 1 0 0 0 x x 0 0 0
a. The DM (Device Match signal) value is determined by the DR4T,DR4F, DR3..DR0 field of the ROWA and ROWR packets. See Table 5. b. The ATTN command does not cause a RLX-to-ATTN transition for a broadcast operation (DR4T/DR4F=1/1). c. An "x" entry indicates which commands may be combined. For instance, the three commands PRER/NAPRC/RLXR may be specified in one ROP value (011000111000).
Page 8
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Table 7 shows the COP field encoding. The device must be in the ATTN power state in order to receive COLC packets. The COLC packet is used primarily to specify RD (read) and WR (write) commands. Retire operations (moving data from the write buffer to a sense amp) happen automatically. See Figure 18 for a more detailed description.
Direct RDRAMTM
The COLC packet can also specify a PREC command, which precharges a bank and its associated sense amps. The RDA/WRA commands are equivalent to combining RD/WR with a PREC. RLXC (relax) performs a power mode transition. See "Power State Management" on page 50.
Table 7: COLC Packet Field Encodings
S DC4.. DC0 (select device)a ---/= (DEVID4 ..0) == (DEVID4 ..0) == (DEVID4 ..0) == (DEVID4 ..0) == (DEVID4 ..0) == (DEVID4 ..0) == (DEVID4 ..0) == (DEVID4 ..0) == (DEVID4 ..0) == (DEVID4 ..0) COP3..0 Name --------x000b x001 x010 x011 x100 x101 x110 x111 1xxx NOCOP WR RSRV RD PREC WRA RSRV RDA RLXC Command Description No operation. Retire write buffer of this device. Retire write buffer of this device. Retire write buffer of this device, then write column C5..C0 of bank BC4..BC0 to write buffer. Reserved, no operation. Read column C5..C0 of bank BC4..BC0 of this device. Retire write buffer of this device, then precharge bank BC4..BC0 (see Figure 15). Same as WR, but precharge bank BC4..BC0 after write buffer (with new data) is retired. Reserved, no operation. Same as RD, but precharge bank BC4..BC0 afterward. Move this device into the standby (STBY) power state (see Figure 47).
0 1 1 1 1 1 1 1 1 1 1
a. "/=" means not equal, "==" means equal. b. An "x" entry indicates which commands may be combined. For instance, the two commands WR/RLXC may be specified in one COP value (1001).
Table 8 shows the COLM and COLX field encodings. The M bit is asserted to specify a COLM packet with two 8 bit bytemask fields MA and MB. If the M bit is not asserted, an COLX is specified. It has device and bank address fields, and an opcode field. The primary use of the COLX packet is to permit an independent PREX (precharge) command to be
specified without consuming control bandwidth on the ROW pins. It is also used for the CAL(calibrate) and SAM (sample) current control commands (see "Current and Temperature Control" on page 56), and for the RLXX power mode command (see "Power State Management" on page 50).
Table 8: COLM Packet and COLX Packet Field Encodings
M 1 0 0 0 0 0 0 0 DX4 .. DX0 (selects device) ---/= (DEVID4 ..0) == (DEVID4 ..0) == (DEVID4 ..0) == (DEVID4 ..0) == (DEVID4 ..0) == (DEVID4 ..0) == (DEVID4 ..0) XOP4..0 00000 1xxx0a x10x0 x11x0 xxx10 xxxx1 Name MSK NOXOP PREX CAL CAL/SAM RLXX RSRV Command Description MB/MA bytemasks used by WR/WRA. No operation. No operation. Precharge bank BX4..BX0 of this device (see Figure 15). Calibrate (drive) IOL current for this device (see Figure 53). Calibrate (drive) and Sample ( update) IOL current for this device (see Figure 53). Move this device into the standby (STBY) power state (see Figure 47). Reserved, no operation.
a. An "x" entry indicates which commands may be combined. For instance, the two commands PREX/RLXX may be specified in one XOP value (10010).
Page 9
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Electrical Conditions
Table 9: Electrical Conditions
Symbol
TJ VDD, VDDA VDD,N, VDDA,N vDD,N, vDDA,N VCMOSa VREF VDIL VDIH RDA VCM VCIS,CTM VCIS,CFM VIL,CMOS VIH,CMOS
Direct RDRAMTM
Parameter and Conditions
Junction temperature under bias Supply voltage Supply voltage droop (DC) during NAP interval (tNLIMIT) Supply voltage ripple (AC) during NAP interval (tNLIMIT) Supply voltage for CMOS pins (2.5V controllers) Supply voltage for CMOS pins (1.8V controllers) Reference voltage RSL data input - low voltage RSL data input - high voltageb RSL data asymmetry: RDA = (VDIH - VREF) / (VREF - VDIL) RSL clock input - common mode VCM = (VCIH+VCIL)/2 RSL clock input swing: VCIS = VCIH - VCIL (CTM,CTMN pins). RSL clock input swing: VCIS = VCIH - VCIL (CFM,CFMN pins). CMOS input low voltage CMOS input high voltage
Min
2.50 - 0.13 -2.0 VDD 1.80 - 0.1 1.40 - 0.2 VREF - 0.5 VREF + 0.2 0.67 1.3 0.35 0.225 0.3c
Max
100 2.50 + 0.13 2.0 2.0 VDD 1.80 + 0.2 1.40 + 0.2 VREF - 0.2 VREF + 0.5 1.00 1.8 1.00 1.00 VCMOS/2 - 0.25 VCMOS+0.3d
Unit
C V % % V V V V V V V V V V
VCMOS/2 + 0.25
a. VCMOS must remain on as long as VDD is applied and cannot be turned off. b. VDIH is typically equal to V TERM (1.8V0.1V) under DC conditions in a system. c. Voltage undershoot is limited to -0.7V for a duration of less than 5ns. d. Voltage overshoot is limited toVCMOS +0.7V for a duration of less than 5ns
Page 10
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Electrical Characteristics
Table 10: Electrical Characteristics
Symbol JC IREF IOH IALL IOL rOUT IOL II,CMOS VOL,CMOS VOH,CMOS Parameter and Conditions Junction-to-Case thermal resistance VREF current @ VREF,MAX RSL output high current @ (0VOUTVDD) RSL IOL current @ VOL = 0.9V, RSL IOL current resolution step Dynamic output impedance @ VOL= 0.9V RSL IOL current @ VOL = 1.0V
b,c
Direct RDRAMTM
Min -10 -10 30.0 150 26.6 -10.0 VCMOS-0.3
Max 0.5 10 10 90.0 2.0 30.6 10.0 0.3 -
Unit C/Watt A A mA mA mA A V V
VDD,MIN , TJ,MAXa
CMOS input leakage current @ (0VI,CMOSVCMOS) CMOS output voltage @ IOL,CMOS= 1.0mA CMOS output high voltage @ IOH,CMOS = -0.25mA
a. This measurement is made in manual current control mode; i.e. with all output device legs sinking current. b. This measurement is made in automatic current control mode after at least 64 current control calibration operations to a device and after CCA and CCB are initialized to a value of 64. This value applies to all DQA and DQB pins. c. This measurement is made in automatic current control mode in a 25 test system with VTERM= 1.714V and VREF= 1.357V and with the ASYMA and ASYMB register fields set to 0.
Page 11
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Timing Conditions
Table 11: Timing Conditions
Symbol
tCYCLE
Direct RDRAMTM
Parameter
CTM and CFM cycle times (-800) CTM and CFM cycle times (-711) CTM and CFM cycle times (-600)
Min
2.50 2.80 3.33 0.2
Max
3.83 3.83 3.83 0.5
Unit
ns
Figure(s)
Figure 55
tCR, tCF tCH, tCL tTR tDCW tDR, tDF tS, tH
CTM and CFM input rise and fall times. Use the minimum value of these parameters during testing. CTM and CFM high and low times CTM-CFM differential (MSE/MS=0/0) CTM-CFM differential (MSE/MS=1/1) Domain crossing window DQA/DQB/ROW/COL input rise/fall times (20% to 80%). Use the minimum value of these parameters during testing. DQA/DQB/ROW/COL-to-CFM set/hold @ t CYCLE=2.50ns DQA/DQB/ROW/COL-to-CFM set/hold @ t CYCLE=2.81ns DQA/DQB/ROW/COL-to-CFM set/hold @ t CYCLE=3.33ns SIO0, SIO1 input rise and fall times CMD, SCK input rise and fall times SCK cycle time - Serial control register transactions SCK cycle time - Power transitions
ns
Figure 55
40% 0.0 0.9 -0.1 0.2 0.200b 0.240c,d 0.275b,d 1000 10 4.25 edgee 1.25 1 40 40 0 5.5 -1 5 4 12 8 2 100 7
60% 1.0 1.0 0.1 0.65
tCYCLE tCYCLE tCYCLE ns
Figure 55 Figure 43 Figure 55 Figure 61 Figure 56
5.0 2.0 10.0
ns
Figure 56
tDR1, tDF1 tDR2, tDF2 tCYCLE1
ns ns ns ns ns ns ns ns ns ns ns tCYCLE tCYCLE tCYCLE tCYCLE tCYCLE tCYCLE tCYCLE tCYCLE s
Figure 58 Figure 58 Figure 58 Figure 58 Figure 58 Figure 58 Figure 58 Figure 58 Figure 58 Figure 49 Figure 59 Figure 49 Figure 49 Figure 48 Figure 53 Figure 53 Figure 49 Figure 48 Figure 47 Figure 46
tCH1, tCL1 tS1 tH1 tS2 tH2 tS3 tH3 tS4 tH4 tNPQ tREADTOCC tCCSAMTOREAD tCE tCD tFRM tNLIMIT
SCK high and low times CMD setup time to SCK rising or falling CMD hold time to SCK rising or falling SIO0 setup time to SCK falling edge SIO0 hold time to SCK falling edge PDEV setup time on DQA5..0 to SCK rising edge. PDEV hold time on DQA5..0 to SCK rising edge. ROW2..0, COL4..0 setup time for quiet window ROW2..0, COL4..0 hold time for quiet window f Quiet on ROW/COL bits during NAP/PDN entry Offset between read data and CC packets (same device) Offset between CC packet and read data (same device) CTM/CFM stable before NAP/PDN exit CTM/CFM stable after NAP/PDN entry ROW packet to COL packet ATTN framing delay Maximum time in NAP mode
edgee
Page 12
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Table 11: Timing Conditions
Symbol
tREF tBURST tCCTRL tTEMP tTCEN tTCAL tTCQUIET tPAUSE
Direct RDRAMTM
Parameter
Refresh interval Interval after PDN or NAP (with self-refresh) exit in which all banks of the RDRAM must be refreshed at least once. Current control interval Temperature control interval TCE command to TCAL command TCAL command to quiet window Quiet window (no read data) RDRAM delay (no RSL operations allowed)
Min
Max
32 200
Unit
ms s
Figure(s)
Figure 51 Figure 52
34 tCYCLE
100ms 100
ms/tCYCLE ms tCYCLE tCYCLE tCYCLE s
Figure 53 Figure 54 Figure 54 Figure 54 Figure 54
150 2 140
2 200.0
page 38
a. MSE/MS are fields of the SKIP register. For this combination (skip override) the tDCW parameter range is effectively 0.0 to 0.0. b. This parameter also applies to a -800 or -711 part when operated with tCYCLE=3.33ns. c. tS,MIN and tH,MIN for other tCYCLE values can be interpolated between or extrapolated from the timings at the 3 specified tCYCLE values. d. This parameter also applies to a -800 part when operated with tCYCLE=2.81ns. e. With VIL,CMOS=0.5VCMOS-0.4V and VIH,CMOS=0.5VCMOS+0.4V f. Effective hold becomes tH4'=t H4+[PDNXA*64*tSCYCLE+tPDNXB,MAX ]-[PDNX*256*t SCYCLE] if [PDNX*256*tSCYCLE] < [PDNXA*64*tSCYCLE+tPDNXB,MAX]. See Figure 49.
Page 13
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Timing Characteristics
Table 12: Timing Characteristics
Symbol tQ Parameter CTM-to-DQA/DQB output time @ tCYCLE=2.50ns CTM-to-DQA/DQB output time @ tCYCLE=2.81ns CTM-to-DQA/DQB output time @ tCYCLE=3.33ns tQR, tQF tQ1 tHR tQR1, tQF1 tPROP1 tNAPXA tNAPXB tPDNXA tPDNXB tAS tSA tASN tASP DQA/DQB output rise and fall times SCK(neg)-to-SIO0 delay @ CLOAD,MAX = 20pF (SD read data valid). SCK(pos)-to-SIO0 delay @ CLOAD,MAX = 20pF (SD read data hold). SIOOUT rise/fall @ C LOAD,MAX = 20pF SIO0-to-SIO1 or SIO1-to-SIO0 delay @ CLOAD,MAX = 20pF NAP exit delay - phase A NAP exit delay - phase B PDN exit delay - phase A PDN exit delay - phase B ATTN-to-STBY power state delay STBY-to-ATTN power state delay ATTN/STBY-to-NAP power state delay ATTN/STBY-to-PDN power state delay Min -0.260 a -0.300 a,b 0.350a,c 0.2 2 -
Direct RDRAMTM
Max +0.260a +0.300a,b +0.350a,c 0.45 10 5 10 50 40 4 9000 1 0 8 8
Unit ns
Figure(s) Figure 57
ns ns ns ns ns ns ns s tCYCLE tCYCLE tCYCLE tCYCLE tCYCLE
Figure 57 Figure 60 Figure 60 Figure 60 Figure 60 Figure 49 Figure 49 Figure 49 Figure 49 Figure 47 Figure 47 Figure 48 Figure 48
a. tQ,MIN and tQ,MAX for other tCYCLE values can be interpolated between or extrapolated from the timings at the 3 specified tCYCLE values. b. This parameter also applies to a -800 part when operated with t CYCLE=2.81ns. c. This parameter also applies to a -800 or -711 part when operated with tCYCLE=3.33ns.
Page 14
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Timing Parameters
Table 13: Timing Parameter Summary
Parameter Description Min -45 -800 Min -45 -711 28 20
Direct RDRAMTM
Min -53.3 -600 28 20
Max
Units
Figure(s)
tRC tRAS
Row Cycle time of RDRAM banks -the interval between ROWA packets with 28 ACT commands to the same bank. RAS-asserted time of RDRAM bank - the interval between ROWA packet with ACT command and next ROWR packet with PRERa command to the same bank. Row Precharge time of RDRAM banks - the interval between ROWR packet with PRERa command and next ROWA packet with ACT command to the same bank. 20
-
tCYCLE
Figure 16 Figure 17 Figure 16 Figure 17 Figure 16 Figure 17 Figure 13 Figure 14 Figure 16 Figure 17
64sb tCYCLE
tRP
8
8
8
-
tCYCLE
tPP tRR tRCD
Precharge-to-precharge time of RDRAM device - the interval between succes- 8 sive ROWR packets with PRERa commands to any banks of the same device. RAS-to-RAS time of RDRAM device - the interval between successive ROWA packets with ACT commands to any banks of the same device. 8
8 8 7
8 8 7
-
tCYCLE tCYCLE tCYCLE
RAS-to-CAS Delay - the interval from ROWA packet with ACT command to 9 COLC packet with RD or WR command). Note - the RAS-to-CAS delay seen by the RDRAM core (tRCD-C) is equal to t RCD-C = 1 + tRCD because of differences in the row and column paths through the RDRAM interface. CAS Access delay - the interval from RD command to Q read data. The equa- 8 tion for tCAC is given in the TPARM register in Figure 40. CAS Write Delay (interval from WR command to D write data. CAS-to-CAS time of RDRAM bank - the interval between successive COLC commands). Length of ROWA, ROWR, COLC, COLM or COLX packet. 6 4 4
tCAC tCWD tCC tPACKET tRTR tOFFP
8 6 4 4 8 4
8 6 4 4 8 4
12 6 4 4
tCYCLE tCYCLE tCYCLE tCYCLE tCYCLE tCYCLE
Figure 5 Figure 40 Figure 5 Figure 16 Figure 17 Figure 3 Figure 18 Figure 15 Figure 40
Interval from COLC packet with WR command to COLC packet which causes 8 retire, and to COLM packet with bytemask. The interval (offset) from COLC packet with RDA command, or from COLC 4 packet with retire command (after WRA automatic precharge), or from COLC packet with PREC command, or from COLX packet with PREX command to the equivalent ROWR packet with PRER. The equation for tOFFP is given in the TPARM register in Figure 40. Interval from last COLC packet with RD command to ROWR packet with PRER. Interval from last COLC packet with automatic retire command to ROWR packet with PRER. 4 4
tRDP tRTP
4 4
4 4
-
tCYCLE tCYCLE
Figure 16 Figure 17
a. Or equivalent PREC or PREX command. See Figure 15. b. This is a constraint imposed by the core, and is therefore in units of s rather than tCYCLE.
Page 15
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Absolute Maximum Ratings
Table 14: Absolute Maximum Ratings
Symbol
VI,ABS VDD,ABS, VDDA,ABS TSTORE
Direct RDRAMTM
Parameter
Voltage applied to any RSL or CMOS pin with respect to Gnd Voltage on VDD and VDDA with respect to Gnd Storage temperature
Min
- 0.3 - 0.5 - 50
Max
VDD+0.3 VDD+1.0 100
Unit
V V C
IDD - Supply Current Profile
Table 15: Supply Current Profile
Min I DD value RDRAM Power State and Steady-State Transaction Ratesa Max -45 -800
5000 4 105
Max -45 -711
5000 4 100
Max -53.3 -600
5000 4 90
Unit
IDD,PDN IDD,NAP IDD,STBY IDD,REFRESH IDD,ATTN IDD,ATTN-W IDD,ATTN-R
Device in PDN, self-refresh enabled and INIT.LSR=0. Device in NAP. Device in STBY. This is the average for a device in STBY with (1) no packets on the Channel, and (2) with packets sent to other devices. Device in STBY and refreshing rows at the tREF,MAX period. Device in ATTN. This is the average for a device in ATTN with (1) no packets on the Channel, and (2) with packets sent to other devices. Device in ATTN. ACT command every 8*t CYCLE, PRE command every 8*t CYCLE, WR command every 4*tCYCLE, and data is 1100..1100 Device in ATTN. ACT command every 8*t CYCLE, PRE command every 8*tCYCLE, RD command every 4*tCYCLE, and data is 1111..1111 c
-
A mA mA
-
105 165
100 155
90 140
mA mA
-
575/ 625b 490/ 520
525/ 580 450/ 480
455/ 500 400/ 420
mA
-
mA
a. CMOS interface consumes power in all power states. b. x16/x18 RDRAM data width. c. This does not include the IOL sink current. The RDRAM dissipates I OL*VOL in each output driver when a logic one is driven.
Table 16: Supply Current at Initialization
Symbol
IDD,PWRUP,D IDD,SETR,D
Parameter
IDD from power -on to SETR IDD from SETR to CLRR
Allowed Range of t CYCLE
3.33ns to 3.83ns 2.50ns to 3.32ns 3.33ns to 3.83ns 2.50ns to 3.32ns
VDD
VDD,MIN VDD,MIN
Min
-
Max
150a 200b 250b 332b
Unit
mA
-
mA
Page 16
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Capacitance and Inductance
Table 17: RSL Pin Parasitics
Symbol LI L12 Parameter and Conditions - RSL pins RSL effective input inductance Mutual inductance between any DQA or DQB RSL signals. Mutual inductance between any ROW or COL RSL signals. LI CI Difference in LI value between any RSL pins of a single device. RSL effective input capacitancea 800 711 600 C12 CI RI Mutual capacitance between any RSL signals. Difference in CI value between average of {CTM, CTMN, CFM, CFMN} and any RSL pins of a single device. RSL effective input resistance 2.0 2.0 2.0 Min
Direct RDRAMTM
Max 4.0 0.2 0.6 1.8 2.4 2.4 2.6 0.1 0.06
Unit nH nH nH nH pF
Figure Figure 62 Figure 62
Figure 62 Figure 62
pF pF
Figure 62 Figure 62
4
15
Figure 62
a. This value is a combination of the device IO circuitry and package capacitances measured at VDD=2.5V and f=400MHz with pin biased at 1.4V.
Table 18: CMOS Pin Parasitics
Symbol LI ,CMOS CI ,CMOS CI ,CMOS,SIO Parameter and Conditions - CMOS pins CMOS effective input inductance CMOS effective input capacitance (SCK,CMD)a CMOS effective input capacitance (SIO1, SIO0) a 1.7 Min Max 8.0 2.1 7.0 Unit nH pF pF Figure Figure 62
a. This value is a combination of the device IO circuitry and package capacitances.
Page 17
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Center-Bonded uBGA Package (62 Balls)
Figure 4 shows the form and dimensions of the recommended package for the center-bonded CSP device class D A 1 2 3 4 5 6 7 8 9 10 11 12 d e1 Bottom e2 A B C D E F G H J Bottom
Direct RDRAMTM
Bottom
Top
E1 Figure 4: Center-Bonded uBGA Package
E Table 19 lists the numerical values corresponding to dimensions shown in Figure 4. Table 19: Center-Bonded uBGA Package Dimensions
Symbol e1 e2 A D E E1 d
Parameter Ball pitch (x-axis) Ball pitch (y-axis) Package body length Package body width Package total thickness Ball height Ball diameter
Min(128Mb/144Mb) 1.00 0.8 11.90 10.10 0.20 0.30
Max(128Mb/144Mb) 1.00 0.8 12.10 10.30 1.00a 0.30 0.40
Unit mm mm mm mm mm mm mm
a. The E,MAX parameter for SO-RIMM applications is 0.94mm.
Page 18
Version 1.11 Oct. 2000

▲Up To Search▲

Price & Availability of K4R441869B-NMCK7

	To Download K4R441869B-NMCK7 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .